Masters Thesis

Analytical Model of GaN MESFET's With Velocity Saturation and Negative Differential Resistance

A physics based analytical model of GaN MESFET has been developed to study the negative differential resistance (NDR) effect on the carrier drift velocity and carrier mobility to promote the GaN MESFET device for high frequency range in order of terra hertz (THz). The NDR effect on the drain-source current, transconductance and gate capacitance has been studied and the domain effect on electrical and intrinsic parameters has been considered to enhance the device frequency response.. The domain formation in the channel MESFET has been determined by the electrical field distribution in the channel doping concentration.

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