A Comprehensive Analytical Model For SiC Based MISFETS

One dimensional physics based analytical modeling of SiC MISFET has been developed. The drain-source current, transconductance, and gate-source capacitance have been evaluated. The main objective of this project is to study the frequency response through the transconductance and gate-source capacitance. The transconductance and gate-source capacitance have been calculated in the current saturation region to study the frequency response of the MISFET. The frequency response of the devices has been evaluated to study the effect of the physical dimension (gate length and insulator thickness) and gate biasing effect on the frequency behavior of the device. The extracted device characteristics obey the similar properties of I-V characteristics and intrinsic parameter of other MISFET devices.