Physics based simulation of GaN MESFET for HIGH POWER RF APPLICATIONS

GaN material becomes a prime candidate for high power and frequency amplifiers for its properties like high electric breakdown voltage, stability and good thermal conductivity, wide bandgap and high electron velocity. A physics based analytical model for GaN MESFET is developed, taking into consideration different fabrication parameters like Ion range, Ion dose, annealing parameters, ion energy and physical parameters like channel thickness, impurity doping concentration and substrate doping to obtain optimized values for threshold voltage, intrinsic parameters like, Internal gate-drain resistance, Transconductance, gate-drain capacitance and source-drain current. The intrinsic parameters were studied for the explanation of frequency response of the device made from GaN material. The detailed analysis of which has been explained in the theory section of chapter 4 and chapter 5.